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Freescale Semiconductor Technical Data
Document Number: MRF21085 Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 13.6 dB Drain Efficiency -- 23% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21085LR3 MRF21085LSR3
2110 - 2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF21085LR3
CASE 465A - 06, STYLE 1 NI - 780S MRF21085LSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 224 1.28 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.78 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF21085LR3 MRF21085LSR3 1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 3.6 -- pF VGS(th) VGS(Q) VDS(on) 2 3 -- -- 3.9 0.18 4 5 0.21 Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 10 1 Vdc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common- Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Part is internally matched both on input and output. (continued) Gps 12 13.6 -- dB
20
23
--
%
IM3
--
- 37.5
- 35
dBc
ACPR
--
- 41
- 38
dBc
IRL
--
- 12
-9
dB
MRF21085LR3 MRF21085LSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued) Two - Tone Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Two - Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) Gps -- 13.6 -- dB Symbol Min Typ Max Unit
--
36
--
%
IMD
--
- 31
--
dBc
IRL
--
- 12
--
dB
P1dB
--
100
--
W
MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 3
VBIAS R1 + R2 C5 C4 C3
R3 B1 + C2 C7 C8
R4 VSUPPLY + C9 C10 C11 + C12
L1
Z4 RF INPUT
Z8 RF OUTPUT
Z1 C1
Z2
Z3 DUT
Z5
Z6 C6
Z7
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.750 x 0.084 Microstrip 1.015 x 0.084 Microstrip 0.480 x 0.800 Microstrip 0.750 x 0.050 Microstrip 0.610 x 0.800 Microstrip 0.885 x 0.084 Microstrip 0.720 x 0.084 Microstrip 0.800 x 0.070 Microstrip
Board PCB
0.030 Glass Teflon(R), Keene GX - 0300- 55- 22, r = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR
Figure 1. MRF21085L Test Circuit Schematic Table 5. MRF21085 Test Circuit Component Designations and Values
Designators B1 C1, C6 C2 C3, C9 C4, C10 C5 C7 C8 C11, C12 L1 N1, N2 R1 R2 R3, R4 Description Short Ferrite Bead, Fair Rite, #2743019447 43 pF Chip Capacitors, ATC #100B430JCA500X 10 pF Chip Capacitor, ATC #100B100JCA500X 1000 pF Chip Capacitors, ATC #100B102JCA500X 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 1 Turn, #20 AWG, 0.100 ID Type N Flange Mounts, Omni Spectra #3052 - 1648- 10 1.0 k, 1/8 W Chip Resistor 180 k, 1/8 W Chip Resistor 10 , 1/8 W Chip Resistors
MRF21085LR3 MRF21085LSR3 4 RF Device Data Freescale Semiconductor
C2 R1 B1 R2 C5 C4 CUT OUT WB1 WB2 C3 R3
C7
C8
L1 C9
C10 R4 C11 C12
C1
C6
MRF21085 Rev 3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21085L Test Circuit Component Layout
MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS Avg.) N-CDMA 30 VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) G ps -25 -30 -35 -40 -45 -50 -55 IM3 (dBc), ACPR (dBc) -25 -30 -35 -40 -45 3rd Order -50 -55 -60 -65 4 10 Pout, OUTPUT POWER (WATTS) PEP 5th Order 7th Order 20 15 10 5 100 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz 45 40 , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 35 30 25
IM3
ACPR
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
-25 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 -50 -55 4 10 Pout, OUTPUT POWER (WATTS) PEP 100 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 24 22 20 18 16 ACPR 14 12 G ps 2090
Figure 4. Intermodulation Distortion Products versus Output Power
IRL VDD = 28 Vdc 2-Carrier W-CDMA Pout = 19 W (Avg.) 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3
0 -10 -20 -30 -40 -50 -60 2190
IDQ = 700 mA 1300 mA 1150 mA 850 mA 1000 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz
2110
2130
2150
2170
f, FREQUENCY (MHz)
Figure 5. Third Order Intermodulation Distortion versus Output Power
14.5 14 13.5 13 12.5 12 11.5 2 10 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz G ps 60 50 , DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%) 40 30 20 10 35 0 100 130 34 24 42 IMD 41 40 39 38 37 36 G ps , POWER GAIN (dB)
Figure 6. 2-Carrier W-CDMA Broadband Performance
-24 -25 -26 -27 -28 -29 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 25 26 27 28 -30 -31 -32 29
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance MRF21085LR3 MRF21085LSR3 6
Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) IDQ = 1300 mA 1150 mA G ps , POWER GAIN (dB) 14 1000 mA 850 mA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 14.5 40 IRL 35 30 25 20 15 10 2095 2110 2125 2140 2155 2170 f, FREQUENCY (MHz) VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 1000 mA 10 MHz Tone Spacing IMD -15 -20 -25 -30 -35 -40 2185 -10
13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 4 10 Pout, OUTPUT POWER (WATTS) PEP 100
Gps
12.5
Figure 9. Two-Tone Power Gain versus Output Power
Figure 10. Two-Tone Broadband Performance
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 5th Order -45 7th Order -50 -55 0.1 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 3rd Order (dB)
+20 +30 0 -10 -20 -30 -40 -50 -60 -70 1 Df, TONE SPACING (kHz) 10 30 -80 -25
3.84 MHz Channel BW
-ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in 3.84 MHz BW -20 -15 -10 -5 0 5 10
+IM3 in 3.84 MHz BW 15 20 25
f, FREQUENCY (MHz)
Figure 11. Intermodulation Distortion Products versus Two - Tone Spacing
Figure 12. 2-Carrier W-CDMA Spectrum
MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 7
f = 2170 MHz
Zo = 5
Zload f = 2110 MHz f = 2170 MHz Zsource f = 2110 MHz
VDD = 28 V, IDQ = 1000 mA, Pout = 19 W Avg. f MHz 2110 2140 2170 Zsource 1.10 - j3.71 1.11 - j3.57 1.12 - j3.40 Zload 1.23 - j2.10 1.26 - j1.92 1.25 - j1.76
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance
MRF21085LR3 MRF21085LSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF21085LR3 MRF21085LSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF21085LR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF21085LSR3
MRF21085LR3 MRF21085LSR3 RF Device Data Freescale Semiconductor 11
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MRF21085LR3 MRF21085LSR3
Rev. 12 9, 5/2006 Document Number: MRF21085
RF Device Data Freescale Semiconductor

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